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Proceedings Paper

Long-wavelength GaAs quantum-well IR detectors: low-temperature performance characteristics
Author(s): Mary Rosenbluth; Michael J. O'Loughlin; Walter L. Bloss; Frank C. De Lucia; Helmut Kanter; Bruce Kenneth Janousek; Elaine Perry; Michael J. Daugherty
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Paper Abstract

We have fabricated and characterized several GaAs/AlGaAs multiquantum well infrared detectors at temperatures ranging from 6 K to 77 K. The detectors were designed to have a single bound state in the quantum well and the first excited state in the continuum above the AIGaAs conduction band edge. The difference in energy between the two levels, as determined by the quantum well width and aluminum mole fraction in the barrier, was chosen such that absorption would occur in the 8-14 tm wavelength region. Each detector was characterized by FTIR absorption, dark current, responsivity, spectral noise density, and thermal activation energy measurements. The -maximum observed detectivity is 1 .8 x 1 012 cmIHz/W at ?= 8.3 jim and 6 K.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20733
Show Author Affiliations
Mary Rosenbluth, The Aerospace Corp. (United States)
Michael J. O'Loughlin, The Aerospace Corp. (United States)
Walter L. Bloss, The Aerospace Corp. (United States)
Frank C. De Lucia, The Aerospace Corp. (United States)
Helmut Kanter, The Aerospace Corp. (United States)
Bruce Kenneth Janousek, The Aerospace Corp. (United States)
Elaine Perry, The Aerospace Corp. (United States)
Michael J. Daugherty, The Aerospace Corp. (United States)

Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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