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Proceedings Paper

Investigation of LP-MOCVD-grown GaAs-GaInP multiquantum wells by reflectance anistropy
Author(s): Manijeh Razeghi; A. Machado; S. Koch; O. Acher; Franck Omnes; Martin Defour
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Paper Abstract

High-quality GaAs-GalnP heterojunctions, quantum wells and superlattices have been grown using low-pressure metalorganic chemical vapo deposition. We showed using photoluminescence that the growth rate of the thin layers can not be extrapolated from the thick layer growth rate. In situ reflectance anisotropy (RA) measurements were used to monitor the growth. Correlations were made between the RA signals and film quality. RA signals were also measured for GaAs quantum wells of various thickness, as well as f superlattice growth.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20730
Show Author Affiliations
Manijeh Razeghi, Thomson-CSF (United States)
A. Machado, Telebras (Brazil)
S. Koch, Thomson-CSF (France)
O. Acher, Thomson-CSF (France)
Franck Omnes, Thomson-CSF (France)
Martin Defour, Thomson-CSF (France)

Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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