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Proceedings Paper

Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes
Author(s): Hyungmo Yoo; Stephen M. Goodnick; John R. Arthur
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Paper Abstract

Pseudomorphic Al 35Ga 65As/In 1Ga 9As resonant tunneling diodes fabricated with asymmetric spacer layers adjaceht to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20727
Show Author Affiliations
Hyungmo Yoo, Oregon State Univ. (United States)
Stephen M. Goodnick, Oregon State Univ. (United States)
John R. Arthur, Oregon State Univ. (United States)

Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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