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Proceedings Paper

Dynamics of nonthermal intrinsic excitons in GaAs quantum wells
Author(s): Theodore C. Damen; Jagdeep Shah; Daniel Y. Oberli; Daniel S. Chemla; John E. Cunningham
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Paper Abstract

We have investigated the formation of intrinsic excitons following excitation of electron-hole pairs close to the bandgap by a subpicosecond laser pulse. We show that excitons form very rapidly ('c≤2Ops) and that they are initially in large wavevector states because of energy and momentum conservation requirements. These non-thermal excitons then interact with other excitons and acoustic phonons and relax very slowly (400ps) to the KO states which couple directly to light. This leads to an extremely slow rise of exciton luminescence and unusual dependence of this risetime on temperature, excitation density and excitation energy. These studies raise a number of fundamental issues related to excitons in semiconductors.

Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20712
Show Author Affiliations
Theodore C. Damen, AT&T Bell Labs. (United States)
Jagdeep Shah, AT&T Bell Labs. (United States)
Daniel Y. Oberli, AT&T Bell Labs. (United States)
Daniel S. Chemla, AT&T Bell Labs. (United States)
John E. Cunningham, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

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