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Proceedings Paper

Investigation of 0.8-um InGaAsP-GaAs laser diodes with multiple quantum wells
Author(s): Jacqueline E. Diaz; Hyuk Jong Yi; Seongsin Kim; Matthew Erdtmann; Lewis S. Wang; Ivan Eliashevich; Erwan Bigan; Manijeh Razeghi
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Paper Abstract

In this paper, we studied the effects of the active region structure (one, two and three quantum wells with same total thickness) for high-power InGaAsP-GaAs separate confinement heterostructure lasers emitting at 0.8 micrometers wavelength. Experimental results for the lasers grown by low pressure metalorganic chemical vapor deposition show excellent agreement with the theoretical model. Total output power of 47 W from an uncoated 1 cm-wide laser bar was achieved in quasi-continuous wave operation.

Paper Details

Date Published: 24 April 1995
PDF: 13 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206931
Show Author Affiliations
Jacqueline E. Diaz, Northwestern Univ. (United States)
Hyuk Jong Yi, Northwestern Univ. (United States)
Seongsin Kim, Northwestern Univ. (United States)
Matthew Erdtmann, Northwestern Univ. (United States)
Lewis S. Wang, Northwestern Univ. (United States)
Ivan Eliashevich, Northwestern Univ. (United States)
Erwan Bigan, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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