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Proceedings Paper

Natural absorption energetics of the crystal semiconductors
Author(s): Nadezhda Pavlovna Netesova
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Paper Abstract

The investigations of the energetics of the phase transitions from crystal to both the solution and a molecular and atomic gas is a high priority task of the condensed medium physics. It is known the linear experimental dependence of gap energy from atomic energy for the ionic semiconductors. It is considered a molecular crystal model that establishes the connection between macroscopic crystal parameters and microscopic characteristics of atoms and molecules. The gap energy is equal the excited energy for the transition between the lower oscillation level of the fundamental and electron excited states of molecules with taking into account the power Born-Gabor cycles which are presented with using of Hess law for the sublimation, solution, dissociation, atomic, photoatomic energies of the crystal semiconductors. As follows from the summary reaction of the phase transitions the elementary processes of the conductivity proceed in molecular and atomic levels. Earlier it was shown for the fundamental absorption edge of polar crystals to be in close agreement with the absorption discontinuity of limiting dulute solutions of these crystals. In this connection the united one oscillator model was proposed for the description electronic characteristics both crystals and their solutions. In development of these ideas the bioscillator model is calculated for the natural absorption of the crystal semiconductors. It is established the accordance between the values of the electron bioscillator and molecular models of the crystals. The energy parameters are calculated for a number of crystal semiconductors from the absorption spectra.

Paper Details

Date Published: 24 April 1995
PDF: 12 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206926
Show Author Affiliations
Nadezhda Pavlovna Netesova, Moscow Lomonosov State Univ. (Russia)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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