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Proceedings Paper

Stark effect in type II heterostructure: application to electro-optical modulator
Author(s): C. Lugand; Taha Benyattou; Gerard Guillot
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Paper Abstract

In this paper, we have simulated a new kind of modulator based on type II heterostructure where electrons and holes are spatially separated. Thanks to the dipole that originates from this separation, a linear Stark effect is expected with a blue or red shift depending on the sign of the bias. The proposed structure consists in a well composed of two layers In0.3Ga0.7As/In0.53Ga0.47As, and barriers of Al0.48In0.52As grown on InP. The alternance of tensile and lattice matched layer is expected to give rise to a type II heterostructure for light holes. We have solved the Schrodinger equation by the finite difference method using the envelope function approximation. Excitonic effects have also been taken into account using a variational approach. An equivalent type I structure in the system InGaAs/AlInAs has also been simulated for comparison. Both of them operates near 1.5 micrometers .

Paper Details

Date Published: 24 April 1995
PDF: 8 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206920
Show Author Affiliations
C. Lugand, INSA/URA/CNRS (France)
Taha Benyattou, INSA/URA/CNRS (France)
Gerard Guillot, INSA/URA/CNRS (France)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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