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Proceedings Paper

Er-doped Si/SiO2 microcavities
Author(s): E. Fred Schubert; J. M. Poate
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Paper Abstract

The optical characteristics and the recombination dynamics of Er-doped Si/SiO2 planar microcavities are reviewed. We show that the emission characteristics of the optically excited Er3+ ions are significantly changed by microcavity effects. For emission-resonant microcavities, the intensity, spectral characteristics, far-field distribution, and spontaneous lifetime are changed. For absorption-resonant microcavities, the absorption efficiency of the 980 nm excitation is strongly enhanced. The results demonstrate that the employment of microcavities in optical as well as optoelectronic devices provides new possibilities to enhance the properties of photonic and optoelectronic devices.

Paper Details

Date Published: 24 April 1995
PDF: 20 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206896
Show Author Affiliations
E. Fred Schubert, AT&T Bell Labs. (United States)
J. M. Poate, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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