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Proceedings Paper

Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers
Author(s): James R. Hoff; Erwan Bigan; Gail J. Brown; Manijeh Razeghi
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Paper Abstract

Acceptor doped Quantum Well Intersubband Photodetectors with GaAs wells and lattice matched barriers of both ternary (In0.49Ga0.51P) and quaternary (In0.62Ga0.38As0.22P0.78) materials have been grown on semi-insulating GaAs substrates by Low Pressure Metal Organic Chemical Vapor Deposition. Mesa devices were fabricated and subjected to a series of tests to illuminate experimentally some of the detection capabilities of the lattice matched quaternary InxGa1-xAsyP1-y system with (0 <EQ x <EQ 0.52) and (0 <EQ y <EQ 1). The observed photoresponse cut-off wavelengths are in good agreement with the activation energies observed in the temperature dependence of the dark currents. Kronig-Penney calculations were used to model the intersubband transition energies.

Paper Details

Date Published: 24 April 1995
PDF: 10 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206893
Show Author Affiliations
James R. Hoff, Northwestern Univ. (United States)
Erwan Bigan, Northwestern Univ. (United States)
Gail J. Brown, Air Force Wright Lab. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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