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Proceedings Paper

Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers
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Paper Abstract

We review state-of-the-art aluminum-free GaInP-GaInAsP-GaInAs laser diodes which emit at the wavelength of 980 nm. These lasers are intended for pumping light into erbium-doped optical fiber amplifiers. We discuss the preparing of the layer structure, using the gas-source molecular beam epitaxy growth method, the lasing characteristics, fiber coupling efficiency, and reliability issues.

Paper Details

Date Published: 24 April 1995
PDF: 9 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206883
Show Author Affiliations
Markus Pessa, Tampere Univ. of Technology (Finland)
Jari T. Nappi, Tampere Univ. of Technology (Finland)
Alexander Ovtchinnikov, Tampere Univ. of Technology (Finland)
Pekka Savolainen, Tampere Univ. of Technology (Finland)
Harry M. Asonen, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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