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Proceedings Paper

Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates
Author(s): Patrick Kung; Xiaolong Zhang; Erwan Bigan; Manijeh Razeghi; Adam W. Saxler
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Paper Abstract

High quality AlN and GaN epilayers have been grown on basal plane sapphire by low pressure metalorganic chemical vapor deposition. The X-ray rocking curve linewidth of the AlN and GaN films were about 100 and 30 arcsecs respectively. Sharp absorption edges were determined at 6.1 and 3.4 eV respectively. Successful donor-bound excitonic luminescence emissions were detected for GaN films grown on sapphire and silicon. Two additional lines at 3.37 and 3.31 eV were observed on GaN on sapphire and assumed to be impurity-related. Doping of GaN layers was achieved with magnesium. Mg-related photoluminescence emissions were successfully detected on as-grown samples, without any post-growth treatment.

Paper Details

Date Published: 24 April 1995
PDF: 10 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206881
Show Author Affiliations
Patrick Kung, Northwestern Univ. (United States)
Xiaolong Zhang, Northwestern Univ. (United States)
Erwan Bigan, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Adam W. Saxler, Air Force Wright Lab. (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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