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Proceedings Paper

Optoelectronic GaN-based field effect transistors
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Paper Abstract

We describe optoelectronic effects in GaN/AlGaN Heterostructure Field Effect Transistors (HFETs) and Heterostructure Insulated Gate Field Effect Transistors (HIGFETs). GaN/AlGaN HFETs operate as visible blind photodetectors with responsivities as high as several thousand A/W for wavelengths from 200 to 365 nanometers. GaN/AlGaN HIGFETs exhibit light- sensitive long term current-voltage characteristic collapse after an application of a high drain- to-source bias. This collapse is removed by illumination with light with certain wavelengths. We suggest that this collapse is a consequence of hot electron trapping in the AlN barrier layer near the drain edge of the gate.

Paper Details

Date Published: 24 April 1995
PDF: 10 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206879
Show Author Affiliations
Michael S. Shur, Univ. of Virginia (United States)
Mohamed Asif Khan, APA Optics, Inc. (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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