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Proceedings Paper

Optical effect in small geometry devices
Author(s): B. B. Pal; R. K. Sahoo
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Paper Abstract

With the advancement of high bit rate optical communication system, there is a need for a high speed photo detector. Results have been presented for a n+-n-- n+ small geometry GaAs diode under optical illumination. The potential at the n+-nl-interface is found to be more negative due to the photovoltaic effect. The current increases with the increase in absorption coefficient and radiation flux density. The quantum efficiency is over 70% in the wavelength spectrum 0.6 - 0.8 um being more than 80% at 0.76 um. The device can be used in GaAs material for 1.55 um system.

Paper Details

Date Published: 24 April 1995
PDF: 6 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206871
Show Author Affiliations
B. B. Pal, Banaras Hindu Univ. (India)
R. K. Sahoo, Banaras Hindu Univ. (India)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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