Share Email Print

Proceedings Paper

Characterization of semiconductor device structures using contactless electromodulation
Author(s): Fred H. Pollak; Wojciech Krystek; M. Leibovitch; S. Moneger; Hao Qiang; Dong Yan
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This paper reviews some recent developments in the use of the contactless, and hence nondestructive, electromodulation methods of photoreflectance and contactless electroreflectance for the room temperature characterization and qualification of semiconductor device structures. These include heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, depletion and enhancement mode transistors, quantum well lasers, vertical cavity surface emitting lasers, multiple quantum well infrared detectors and solar cells.

Paper Details

Date Published: 24 April 1995
PDF: 13 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206858
Show Author Affiliations
Fred H. Pollak, CUNY/Brooklyn College (United States)
Wojciech Krystek, CUNY/Brooklyn College (United States)
M. Leibovitch, CUNY/Brooklyn College (United States)
S. Moneger, CUNY/Brooklyn College (United States)
Hao Qiang, CUNY/Brooklyn College (United States)
Dong Yan, CUNY/Brooklyn College (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?