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Proceedings Paper

Particle reduction and control in EUV etching process
Author(s): JeaYoung Jun; TaeJoong Ha; SangPyo Kim; DongGyu Yim
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Paper Abstract

As the device design rule shrinks, photomask manufacturers need to have advanced defect controllability during the ARC (Anti-Reflection Coating) and ABS (Absorber) etch in an EUV (extreme ultraviolet) mask. Therefore we studied etching techniques of EUV absorber film to find out the evasion method of particle generation. Usually, Particles are generated by plasma ignition step in etching process. When we use the standard etching process, ARC and ABS films are etched step by step. To reduce the particle generation, the number of ignition steps need to decrease. In this paper, we present the experimental results of in-situ EUV dry etching process technique for ARC and ABS, which reduces the defect level significantly. Analysis tools used for this study are as follows; TEM (for cross-sectional inspection) , SEM (for in-line monitoring ) and OES (for checking optical emission spectrum)

Paper Details

Date Published: 17 October 2014
PDF: 7 pages
Proc. SPIE 9235, Photomask Technology 2014, 92351E (17 October 2014); doi: 10.1117/12.2066297
Show Author Affiliations
JeaYoung Jun, SK Hynix, Inc. (Korea, Republic of)
TaeJoong Ha, SK Hynix, Inc. (Korea, Republic of)
SangPyo Kim, SK Hynix, Inc. (Korea, Republic of)
DongGyu Yim, SK Hynix, Inc. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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