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Proceedings Paper

Photoluminescence of chemically treated InAs (111)A
Author(s): N. Eassa; E. Coetsee; H. C. Swart; A. Venter; J. R. Botha
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Paper Abstract

Variable laser power and temperature dependent photoluminescence (PL) measurements were used to identify some of the optical transitions and impurity-related emissions for chemically treated (Br-methanol, (NH4)2S + S or [(NH4)2S/ (NH4)2SO4] + S solutions) or oxidised (annealed in oxygen) bulk n-InAs (111)A. A combination of PL and X-ray photoelectron spectroscopy (XPS) measurements before and after various treatments was used to identify the chemical nature of the impurities giving rise to bound exciton recombination in InAs (111). Band–to-band transitions have been observed at 0.4185 eV. In addition, two shallow neutral donor bound excitons ascribed to atomic oxygen (at 0.412 eV) and to sulphur (at 0.414 eV), have been detected after treatment.

Paper Details

Date Published: 23 June 2014
PDF: 13 pages
Proc. SPIE 9257, Sensors, MEMS and Electro-Optical Systems, 925703 (23 June 2014); doi: 10.1117/12.2066270
Show Author Affiliations
N. Eassa, Nelson Mandela Metropolitan Univ. (South Africa)
E. Coetsee, Univ. of the Free State (South Africa)
H. C. Swart, Univ. of the Free State (South Africa)
A. Venter, Nelson Mandela Metropolitan Univ. (South Africa)
J. R. Botha, Nelson Mandela Metropolitan Univ. (South Africa)

Published in SPIE Proceedings Vol. 9257:
Sensors, MEMS and Electro-Optical Systems
Monuko du Plessis, Editor(s)

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