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Proceedings Paper

Compact model experimental validation for grapho-epitaxy hole processes and its impact in mask making tolerances
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Paper Abstract

There has been significant research in the area of modeling self-assembling molecular systems. Directed self-assembly (DSA) has proven to be a promising candidate for cost reduction of processes which use double patterning and an enabler of new technology nodes. Self-consistent field theory and Monte Carlo simulators have the capability to probe and explore the mechanisms driving the different phases of a diblock copolymer system. While such methods are appropriate to study the nature of the self-assembly process, they are computationally expensive and they cannot be used to perform mask synthesis operations nor full chip verification. In this case we focus our effort in establishing the minimum set of conditions that a compact model for the manufacture of contact holes using a grapho epitaxy process for a PS-b-PMMA diblock copolymer system needs. The compact model’s main objectives are to find the guiding pattern that produces the lowest possible placement error, as well as verifying that the intended target structures are present after processing. Given that masks are not perfect, and lithographic process variations are not negligible, it is necessary to understand the mask requirements and the types of Optical Proximity Correction techniques that will be used to build guiding patterns. This paper explores the guiding pattern conditions under which proper assembly is achieved, and how the compact model formulation is able to determine placement of reliably assembling structures as well as identification of the guiding patterns which lead to improper assembly. The research leading to these results has been performed in the frame of the industrial collaborative consortium IDeAL focused on the development of Directed Self-assembly technique by block copolymers.

Paper Details

Date Published: 17 October 2014
PDF: 11 pages
Proc. SPIE 9231, 30th European Mask and Lithography Conference, 92310Q (17 October 2014); doi: 10.1117/12.2065840
Show Author Affiliations
Germain Fenger, Mentor Graphics Corp. (Belgium)
J. Andres Torres, Mentor Graphics Corp. (United States)
Yuansheng Ma, Mentor Graphics Corp. (United States)
Yuri Granik, Mentor Graphics Corp. (United States)
Polina Krasnova, Mentor Graphics Corp. (Russian Federation)
Antoine Fouquet, CEA-LETI (France)
Jérôme Belledent, CEA-LETI (France)
Ahmed Gharbi, CEA-LETI (France)
Raluca Tiron, CEA-LETI (France)

Published in SPIE Proceedings Vol. 9231:
30th European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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