
Proceedings Paper
Silicon epitaxy in nanoscale for photovoltaic applicationsFormat | Member Price | Non-Member Price |
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Paper Abstract
Nanostructures provide novel opportunities of studying epitaxy in nano/mesoscale and on nonplanar substrates. Epitaxial
growth of silicon (Si) on the surfaces of Si nanowires along radial direction is a promising way to prepare radial p-(i)-n
junction in nanoscale for optoelectronic devices. Comprehensive studies of Si radial epitaxy in micro/nanoscale reveal
that morphological evolution and size-dependent radial shell growth rate for undoped and doped Si radial shells. Single
crystalline Si radial p-i-n junction wire arrays were utilized to fabricate photovoltaic (PV) devices. The PV devices
exhibited the photoconversion efficiency of 10%, the short-circuit current density of 39 mA/cm2, and the open-circuit
voltage of 0.52 V, respectively.
Paper Details
Date Published: 16 September 2014
PDF: 4 pages
Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917407 (16 September 2014); doi: 10.1117/12.2065696
Published in SPIE Proceedings Vol. 9174:
Nanoepitaxy: Materials and Devices VI
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)
PDF: 4 pages
Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917407 (16 September 2014); doi: 10.1117/12.2065696
Show Author Affiliations
Jinkyoung Yoo, Los Alamos National Lab. (United States)
Binh-Minh Nguyen, Los Alamos National Lab. (United States)
Shadi A. Dayeh, Univ. of California, San Diego (United States)
Binh-Minh Nguyen, Los Alamos National Lab. (United States)
Shadi A. Dayeh, Univ. of California, San Diego (United States)
Paul Schuele, Sharp Labs. of America, Inc. (United States)
David Evans, Sharp Labs. of America, Inc. (United States)
S. T. Picraux, Los Alamos National Lab. (United States)
David Evans, Sharp Labs. of America, Inc. (United States)
S. T. Picraux, Los Alamos National Lab. (United States)
Published in SPIE Proceedings Vol. 9174:
Nanoepitaxy: Materials and Devices VI
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)
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