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Proceedings Paper

Silicon epitaxy in nanoscale for photovoltaic applications
Author(s): Jinkyoung Yoo; Binh-Minh Nguyen; Shadi A. Dayeh; Paul Schuele; David Evans; S. T. Picraux
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Paper Abstract

Nanostructures provide novel opportunities of studying epitaxy in nano/mesoscale and on nonplanar substrates. Epitaxial growth of silicon (Si) on the surfaces of Si nanowires along radial direction is a promising way to prepare radial p-(i)-n junction in nanoscale for optoelectronic devices. Comprehensive studies of Si radial epitaxy in micro/nanoscale reveal that morphological evolution and size-dependent radial shell growth rate for undoped and doped Si radial shells. Single crystalline Si radial p-i-n junction wire arrays were utilized to fabricate photovoltaic (PV) devices. The PV devices exhibited the photoconversion efficiency of 10%, the short-circuit current density of 39 mA/cm2, and the open-circuit voltage of 0.52 V, respectively.

Paper Details

Date Published: 16 September 2014
PDF: 4 pages
Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917407 (16 September 2014); doi: 10.1117/12.2065696
Show Author Affiliations
Jinkyoung Yoo, Los Alamos National Lab. (United States)
Binh-Minh Nguyen, Los Alamos National Lab. (United States)
Shadi A. Dayeh, Univ. of California, San Diego (United States)
Paul Schuele, Sharp Labs. of America, Inc. (United States)
David Evans, Sharp Labs. of America, Inc. (United States)
S. T. Picraux, Los Alamos National Lab. (United States)


Published in SPIE Proceedings Vol. 9174:
Nanoepitaxy: Materials and Devices VI
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)

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