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Proceedings Paper

Pre-amplifier-per-pixel charge-injection-device image sensor
Author(s): Sayed I. Eid
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Paper Abstract

In this paper, a new CID image sensor architecture, pre-amplifier per pixel (PPP), is presented. In this architecture, an amplifier is dedicated to and integrated within each pixel of the image sensor array. The read-out node for a pixel design employing this architecture is local to its pixel and buffered from any other read-out nodes within the image sensor pixel array. Thus, the capacitance of the read-out node in this design is significantly reduced, resulting in significant improvements of read-out sensitivity and noise. This architecture reduces the read-out node capacitance to an order of magnitude of few tens of fF, which yields an rms read-out noise in the order of few tens of electrons. This brings the CID imaging technology to the main stream of read-out noise levels of other solid-state imaging technologies. This is achieved without compromising the traditional strengths of CID imaging technology such as non-destructive read-out, resistance to blooming, radiation hardness, and random-accessibility. The only compromise is the pixel fill-factor. Depending on the minimum process feature size and the pixel size, the pixel fill-factor can be higher than 50%. A test chip has been designed and fabricated. Evaluation of this test chip is presented.

Paper Details

Date Published: 10 April 1995
PDF: 11 pages
Proc. SPIE 2415, Charge-Coupled Devices and Solid State Optical Sensors V, (10 April 1995); doi: 10.1117/12.206526
Show Author Affiliations
Sayed I. Eid, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2415:
Charge-Coupled Devices and Solid State Optical Sensors V
Morley M. Blouke, Editor(s)

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