In-place measurement of semiconductor nanowires can be achieved using a nanoprobe inside a scanning electron microscope. Gold catalyzed vapour-liquid-solid nanowires exhibit a highly perfect metal semiconductor interface which is generally rectifying for moderate to low doping values. The electrical properties of the semiconducting region can be inferred from careful attention to the IV properties in a rapid measurement process involving no lithography or sidewall degradation. The technique is useful for evaluating the effect of surface states on the nanowire conductivity. We present initial results on the epitaxy and electrical characterization of core-shell p-n junction structures using the nanoprobe method.

Date Published: 17 August 2014
PDF: 1 pages
Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917403 (17 August 2014); doi: 10.1117/12.2065265

Published in SPIE Proceedings Vol. 9174:
Nanoepitaxy: Materials and Devices VI
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)