
Proceedings Paper
Investigation on resistive switching characteristics of ZnO thin filmFormat | Member Price | Non-Member Price |
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Paper Abstract
Recently resistive switching (RS) based on ZnO thin film has attracted considerable attention since ZnO with doping can
improve the switching ratio and device performance. In this work, Cu/ZnO/AZO (Al-doped ZnO) and Cu/ZnO:Cu (Cudoped
ZnO) /AZO structures were fabricated for RS, using AZO as bottom electrodes due to its lattice matching with
ZnO, and metal Cu was deposited as the top electrodes. The current-voltage (I-V) characteristics of these RS devices
using different doped ZnO thin films as a dielectric layer were analyzed and compared. The results demonstrated that
ZnO:Cu RS had a higher switching ratio and a larger range of setup and reset voltage than ZnO RS. In addition, we also
found that the high resistance state(HRS)and the low resistance state (LRS) were accordance with space charge
limited current (SCLC) and Ohm’s law respectively. In addition, the effect on RS performance by the top electrode was
investigated by depositing top electrode with different sizes and annealing treatment, and the results indicate that the RS
phenomenon occurred in these Cu/ZnO:Cu/AZO structure devices is caused by bulk effect and interfacial effect
synthetically.
Paper Details
Date Published: 16 September 2014
PDF: 7 pages
Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740T (16 September 2014); doi: 10.1117/12.2064914
Published in SPIE Proceedings Vol. 9174:
Nanoepitaxy: Materials and Devices VI
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)
PDF: 7 pages
Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740T (16 September 2014); doi: 10.1117/12.2064914
Show Author Affiliations
Min Wei, Univ. of Electronic Science and Technology of China (United States)
Fan Yang, Univ. of Electronic Science and Technology of China (China)
Chunfu Li, Univ. of Electronic Science and Technology of China (China)
Fan Yang, Univ. of Electronic Science and Technology of China (China)
Chunfu Li, Univ. of Electronic Science and Technology of China (China)
Hong Deng, Univ. of Electronic Science and Technology of China (China)
Guangjun Wen, Univ. of Electronic Science and Technology of China (China)
Guangjun Wen, Univ. of Electronic Science and Technology of China (China)
Published in SPIE Proceedings Vol. 9174:
Nanoepitaxy: Materials and Devices VI
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)
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