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Proceedings Paper

Carrier lifetime control in III-V multiple quantum wells
Author(s): Michael Lynch; John Hegarty; A. Ginty; William M. Kelly
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Paper Abstract

We report carrier lifetime reduction in GaInAs/InP multiple quantum wells from 3Ons to 95ps using mesas with ion implantation of the sidewalls.

Paper Details

Date Published: 1 August 1990
PDF: 3 pages
Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20642
Show Author Affiliations
Michael Lynch, Univ. of Dublin (Ireland)
John Hegarty, Univ. of Dublin (Ireland)
A. Ginty, Univ. College (United Kingdom)
William M. Kelly, Univ. College (United Kingdom)

Published in SPIE Proceedings Vol. 1280:
High Speed Phenomena in Photonic Materials and Optical Bistability
Dieter Jaeger, Editor(s)

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