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Proceedings Paper

Effect of temperature on the threshold current and wavelength of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) diode lasers
Author(s): Michael M. Dion; Mahmoud Fallahi; F. Chatenoud; Ian M. Templeton; Andre Delage; Richard A. Barber
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Paper Abstract

Results will be presented on the variation of threshold current and emission wavelength with temperature of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) lasers, in the range 10 - 90 degree(s)C. The structures were grown by one-step MBE and the circular gratings were defined by electron-beam lithography. Measurements were made pulsed and CW. The characteristic temperature ranged between 18 - 48 K. A wavelength variation with temperature of around 0.1 nm/ degree(s)C was obtained. The results are compared with those of linear, GaAs-based DBR lasers.

Paper Details

Date Published: 10 April 1995
PDF: 5 pages
Proc. SPIE 2398, Circular-Grating Light-Emitting Sources, (10 April 1995); doi: 10.1117/12.206342
Show Author Affiliations
Michael M. Dion, National Research Council Canada (Canada)
Mahmoud Fallahi, National Research Council Canada (Canada)
F. Chatenoud, National Research Council Canada (Canada)
Ian M. Templeton, National Research Council Canada (Canada)
Andre Delage, National Research Council Canada (Canada)
Richard A. Barber, National Research Council Canada (Canada)

Published in SPIE Proceedings Vol. 2398:
Circular-Grating Light-Emitting Sources
S. Iraj Najafi; Mahmoud Fallahi; Nasser Peyghambarian, Editor(s)

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