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Proceedings Paper

Strained InAs/InP quantum wells and quantum dots for optoelectronic device applications
Author(s): Remo A. Masut; C. A. Tran; Marc Beaudoin; Richard Leonelli
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Paper Abstract

An overview and comparison of both the low pressure metal-organic chemical vapor deposition (MOCVD) and the atomic layer epitaxy of InAs/InP strained heterostructures is presented. Control of the As/P interface down to the one monolayer regime allows the realization of quantum dots (QD) on terraced InP substrates by conventional MOCVD. These embedded InAs QD within the binary matrix show strong blue-shifted luminescence, which is indicative of multi-dimensionally confined structures with no significant interface defects. As a preliminary step towards the incorporation of these QDs in optoelectronic device structures, we also summarize the test results of broad area laser diodes fabricated on structures incorporating strained ultra-thin InAs quantum wells in the active region.

Paper Details

Date Published: 10 April 1995
PDF: 9 pages
Proc. SPIE 2398, Circular-Grating Light-Emitting Sources, (10 April 1995); doi: 10.1117/12.206337
Show Author Affiliations
Remo A. Masut, Ecole Polytechnique de Montreal (Canada)
C. A. Tran, Ecole Polytechnique de Montreal (Canada)
Marc Beaudoin, Ecole Polytechnique de Montreal (Canada)
Richard Leonelli, Univ. de Montreal (Canada)

Published in SPIE Proceedings Vol. 2398:
Circular-Grating Light-Emitting Sources
S. Iraj Najafi; Mahmoud Fallahi; Nasser Peyghambarian, Editor(s)

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