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Proceedings Paper

Optical FET receivers for neural network applications
Author(s): Jiafu Luo; Annette Grot; Demetri Psaltis
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Paper Abstract

Optical FET detectors were fabricated in both the MOSIS/Vitesse HGaAs3 process and the AT&T field-effect-transistor-self-electro-optic effect device (FET-SEED) process. Typical responsivity is in the order of 1,000 A/W and response time in the order of 10 to 100 microsecond(s) ec at 50 nW optical input power. Such high gain detectors through commercially available industrial foundries are especially useful for optical neural network applications where high density integration requires very good uniformity and power dissipation limits the available optical power. The mechanism of such optical FET detectors are discussed.

Paper Details

Date Published: 5 April 1995
PDF: 8 pages
Proc. SPIE 2400, Optoelectronic Interconnects III, (5 April 1995); doi: 10.1117/12.206325
Show Author Affiliations
Jiafu Luo, California Institute of Technology (United States)
Annette Grot, California Institute of Technology (United States)
Demetri Psaltis, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2400:
Optoelectronic Interconnects III
Ray T. Chen; Harvard Scott Hinton, Editor(s)

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