CdTe_xSe_1-x, with its several advantages over the conventional CdZnTe (CZT) material, offers potential as a roomtemperature radiation detector. Its main advantage is the near-unity segregation coefficient of Se in the CdTe matrix that results in higher compositional homogeneity of the grown ingot. In this paper, we discussed the growth of CdTeSe crystals by various techniques, such as the Traveling Heater method and the Vertical Bridgman technique. We analyzed the different defects in the grown ingots, including Te inclusions/precipitations, sub-grain boundaries and dislocation networks, and studied their effects on the materials’ charge-transport characteristics. Our experimental findings demonstrated several advantages of CdTeSe over CZT, in addition to the near-unity segregation coefficient of Se, including lower concentrations of Te-inclusions/precipitations and sub-grain boundaries and a higher degree of uniformity. Our findings on its charge-transport characteristics also are very encouraging.

Date Published: 5 September 2014
PDF: 5 pages
Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 92130F (5 September 2014); doi: 10.1117/12.2063174

Published in SPIE Proceedings Vol. 9213:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI
Arnold Burger; Larry Franks; Ralph B. James; Michael Fiederle, Editor(s)