
Proceedings Paper
Ion-selective electrolyte-gated field-effect transistors: prerequisites for proper functioningFormat | Member Price | Non-Member Price |
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Paper Abstract
Electrolyte-gated organic field-effect transistors (EGOFETs) used as transducers and amplifiers in potentiometric sensors
have recently attracted a significant amount of scientific interest. For that reason, the fundamental prerequisites to achieve
a proper potentiometric signal amplification and transduction are examined. First, polarizable as well as non-polarizable
semiconductor- and gate-electrolyte- interface combinations are investigated by normal pulse voltammetry. The results of
these measurements are correlated with the corresponding transistor characteristics, clarifying the functional principle of
EGOFETs and the requirements for high signal amplification. In addition to a good electrical performance, the EGOFET-transducers
should also be compatible with the targeted sensing application. Accordingly, the influence of different gate
materials and electrolytes on the sensing abilities, are discussed. Even though all physical requirements are met, EGOFETs
typically exhibit irreversible degradation, if the gate potential exceeds a certain level. For that reason, EGOFETs have to
be operated using a constant source-drain operation mode which is presented by means of an H+ (pH) sensitive ion-sensor.
Paper Details
Date Published: 7 October 2014
PDF: 12 pages
Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91851U (7 October 2014); doi: 10.1117/12.2063121
Published in SPIE Proceedings Vol. 9185:
Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII
Zhenan Bao; Ruth Shinar; Ioannis Kymissis; Iain McCulloch, Editor(s)
PDF: 12 pages
Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91851U (7 October 2014); doi: 10.1117/12.2063121
Show Author Affiliations
Johannes Kofler, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Kerstin Schmoltner, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Kerstin Schmoltner, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Emil J. W. List-Kratochvil, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Technische Univ. Graz (Austria)
Technische Univ. Graz (Austria)
Published in SPIE Proceedings Vol. 9185:
Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII
Zhenan Bao; Ruth Shinar; Ioannis Kymissis; Iain McCulloch, Editor(s)
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