Proceedings Paper
Absorption in photonic crystals: from order to disorder| Format | Member Price | Non-Member Price |
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Paper Abstract
In this communication, we present the potentialities offered by 2D photonic crystals to trap and absorb photons in thin silicon layers. We will specifically focus on the impact of the photonic crystal unit cells symmetry, and the possibility to increase light absorption and generated photocurrent using multi-periodic and pseudo-disordered photonic nanostructures.
Paper Details
Date Published: 29 September 2014
PDF: 4 pages
Proc. SPIE 9162, Active Photonic Materials VI, 916217 (29 September 2014);
Published in SPIE Proceedings Vol. 9162:
Active Photonic Materials VI
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)
PDF: 4 pages
Proc. SPIE 9162, Active Photonic Materials VI, 916217 (29 September 2014);
Show Author Affiliations
Christian Seassal, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
Loїc Lalouat, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
He Ding, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
Emmanuel Drouard, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
Guillaume Gomard, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
INSA de Lyon (France) and Karlsruhe Institute of Technology (Germany)
Ecole Centrale de Lyon (France)
Loїc Lalouat, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
He Ding, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
Emmanuel Drouard, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
Guillaume Gomard, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
INSA de Lyon (France) and Karlsruhe Institute of Technology (Germany)
Romain Peretti, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
Thierry Deschamp, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
Fabien Mandorlo, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
INSA de Lyon (France)
Régis Orobtchouk, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
INSA de Lyon (France)
Alain Fave, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
INSA de Lyon (France)
Ecole Centrale de Lyon (France)
Thierry Deschamp, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Ecole Centrale de Lyon (France)
Fabien Mandorlo, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
INSA de Lyon (France)
Régis Orobtchouk, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
INSA de Lyon (France)
Alain Fave, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
INSA de Lyon (France)
Published in SPIE Proceedings Vol. 9162:
Active Photonic Materials VI
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)
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