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Proceedings Paper

Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers
Author(s): Khai V. Nguyen; Sandeep K. Chaudhuri; Krishna C. Mandal
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Paper Abstract

The surface leakage current of high-resolution 4H-SiC epitaxial layer Schottky barrier detectors has been improved significantly after surface passivations of 4H-SiC epitaxial layers. Thin (nanometer range) layers of silicon dioxide (SiO2) and silicon nitride (Si3N4) were deposited on 4H-SiC epitaxial layers using plasma enhanced chemical vapor deposition (PECVD) on 20 m thick n-type 4H-SiC epitaxial layers followed by the fabrication of large area (~12 mm2) Schottky barrier radiation detectors. The fabricated detectors have been characterized through current-voltage (I-V), capacitance-voltage (C-V), and alpha pulse height spectroscopy measurements; the results were compared with that of detectors fabricated without surface passivations. Improved energy resolution of ~ 0.4% for 5486 keV alpha particles was observed after passivation, and it was found that the performance of these detectors were limited by the presence of macroscopic and microscopic crystal defects affecting the charge transport properties adversely. Capacitance mode deep level transient studies (DLTS) revealed the presence of a titanium impurity related shallow level defects (Ec-0.19 eV), and two deep level defects identified as Z1/2 and Ci1 located at Ec-0.62 and ~ Ec-1.40 eV respectively.

Paper Details

Date Published: 9 September 2014
PDF: 10 pages
Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 921315 (9 September 2014); doi: 10.1117/12.2063055
Show Author Affiliations
Khai V. Nguyen, Univ. of South Carolina (United States)
Sandeep K. Chaudhuri, Univ. of South Carolina (United States)
Krishna C. Mandal, Univ. of South Carolina (United States)

Published in SPIE Proceedings Vol. 9213:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI
Arnold Burger; Larry Franks; Ralph B. James; Michael Fiederle, Editor(s)

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