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Proceedings Paper

Change in the bulk resistivity of CdZnTe with selected near IR light
Author(s): Aaron L. Washington II; Jonathan S. Wright; Martine C. Duff; Arnold Burger; Michael Groza; Liviu Matei; Vladimir Buliga
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Paper Abstract

The change in bulk resistivity of CdZnTe (CZT) crystals was measured during infrared (IR) light between 950 and 1000 nm. The crystals are grown using one of the state-of-the-art methods either the traveling heating method or the modified Bridgman method. The change resistivity was evaluated using the steady-state current with and without light. Additionally, the change in current with both IR sources were correlated to the influence of secondary phases (SP) in each crystal using IR transmission microscopy to determine whether the number and size of the impurities has a drastic effect based on the current-voltage (IV) characteristics. SP at various depths within CZT are connected to the existence of variable depth, IR-excitable traps that lie within the bandgap. The release of these traps will significantly affect the overall current in the system. However, the current increase may not match the overall energy of the light utilized are more dependent on the size and quantity for each energy range.

Paper Details

Date Published: 9 September 2014
PDF: 7 pages
Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 92131K (9 September 2014); doi: 10.1117/12.2063042
Show Author Affiliations
Aaron L. Washington II, Savannah River National Lab. (United States)
Jonathan S. Wright, Savannah River National Lab. (United States)
Martine C. Duff, Savannah River National Lab. (United States)
Arnold Burger, Fisk Univ. (United States)
Michael Groza, Fisk Univ. (United States)
Liviu Matei, Fisk Univ. (United States)
Vladimir Buliga, Fisk Univ. (United States)


Published in SPIE Proceedings Vol. 9213:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI
Arnold Burger; Larry Franks; Ralph B. James; Michael Fiederle, Editor(s)

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