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Proceedings Paper

Planar laser-induced fluorescence imaging of Si and SiO during pulsed laser ablation of Si
Author(s): Phillip H. Paul; Dale L. Capewell; David G. Goodwin
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Paper Abstract

Planar laser induced fluorescence has been used to acquire time sequence images of ground-state, neutral Si and SiO during laser ablation of an Si target in vacuum and in the presence of a background gas at a fluence of 3-4 J/cm2. The SiO images, taken in air, strongly suggest that the observed SiO is created through reaction of silicon with oxygen at the contact front as the plume expands.

Paper Details

Date Published: 10 April 1995
PDF: 10 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206278
Show Author Affiliations
Phillip H. Paul, Sandia National Labs. (United States)
Dale L. Capewell, California Institute of Technology (United States)
David G. Goodwin, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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