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Proceedings Paper

Low-temperature photoluminescence in In-doped CdMnTe/CdTe quantum wells and superlattices
Author(s): Jerzy M. Wrobel; Jan J. Dubowski; Piotr Becla
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Paper Abstract

Multiple quantum wells and superlattices of CdMnTe/CdTe were grown epitaxially on ZnCdTe using Pulsed Laser Evaporation and Epitaxy for Cd.85Mn.15Te doped with indium and high purity CdTe targets. Photoluminescence was measured in the 4-80 K temperature range. The use of different excitation wavelengths (488 nm and 623 nm) led to depth studies of the structures. In order to determine the degree of indium incorporation in the wells, the results from the multiple layer structures were compared with the photoluminescence from single layers deposited under similar conditions.

Paper Details

Date Published: 10 April 1995
PDF: 8 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206257
Show Author Affiliations
Jerzy M. Wrobel, Univ. of Missouri/Kansas City (United States)
Jan J. Dubowski, National Research Council of Canada (Canada)
Piotr Becla, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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