Proceedings Paper
Variable line spacing diffraction grating fabricated by direct write lithography for synchrotron beamline applications| Format | Member Price | Non-Member Price |
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Paper Abstract
A Variable Line Spacing (VLS) diffraction grating has been fabricated using an optical direct write technique. This
grating is now in use at the Advanced Light Source, in beamline 12.0.1, delivering light for EUV lithography. Direct
Write Lithography (DWL) with focused light at λ = 442 nm was used for the first time to record a VLS grating pattern
on a substrate coated with a photoresist. The pattern was transferred to the Si substrate surface using reactive plasma
etch. Precision of groove placement was verified by wavefront measurements of a witness grating recorded
simultaneously with the VLS pattern. Atomic force microscope measurements confirmed near ideal groove shape and
high smoothness of the grating grooves. The grating coated with a Ru coating demonstrated diffraction efficiency of
39.5% in the negative first diffraction order which corresponds to theoretical efficiency at the wavelength of 13.5 nm.
This work validates the DWL approach as a promising technique for advanced grating fabrication.
Paper Details
Date Published: 5 September 2014
PDF: 7 pages
Proc. SPIE 9207, Advances in X-Ray/EUV Optics and Components IX, 920706 (5 September 2014); doi: 10.1117/12.2062340
Published in SPIE Proceedings Vol. 9207:
Advances in X-Ray/EUV Optics and Components IX
Christian Morawe; Ali M. Khounsary; Shunji Goto, Editor(s)
PDF: 7 pages
Proc. SPIE 9207, Advances in X-Ray/EUV Optics and Components IX, 920706 (5 September 2014); doi: 10.1117/12.2062340
Show Author Affiliations
D. L. Voronov, Lawrence Berkeley National Lab. (United States)
T. Warwick, Lawrence Berkeley National Lab. (United States)
E. M. Gullikson, Lawrence Berkeley National Lab. (United States)
F. Salmassi, Lawrence Berkeley National Lab. (United States)
T. Warwick, Lawrence Berkeley National Lab. (United States)
E. M. Gullikson, Lawrence Berkeley National Lab. (United States)
F. Salmassi, Lawrence Berkeley National Lab. (United States)
P. Naulleau, Lawrence Berkeley National Lab. (United States)
N. A. Artemiev, Lawrence Berkeley National Lab. (United States)
P. Lum, Univ. of California, Berkeley (United States)
H. A. Padmore, Lawrence Berkeley National Lab. (United States)
N. A. Artemiev, Lawrence Berkeley National Lab. (United States)
P. Lum, Univ. of California, Berkeley (United States)
H. A. Padmore, Lawrence Berkeley National Lab. (United States)
Published in SPIE Proceedings Vol. 9207:
Advances in X-Ray/EUV Optics and Components IX
Christian Morawe; Ali M. Khounsary; Shunji Goto, Editor(s)
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