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Proceedings Paper

Design and growth of lead selenoiodide semiconductors crystals for radiation detection
Author(s): David House; N. B. Singh; B. Arnold; Fow-Sen Choa; B. Schreib
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Paper Abstract

We have designed experiments utilizing for achieving desired bandgap resistivity, electron hole-pairs by solid solution materials. A low temperature synthesis, purification and growth to reduce stress and high yield for low defect density crystals of PbI2-PbSe system was developed for low cost large volume high efficiency detectors. This material system can be used for γ-ray detection. The material design is based on the heavy metal halide and selenide solid-solution system. This novel multicomponent crystal involves innovative approach for synthesis, purification and low temperature growth from the melt in modified three- zone Bridgman furnace. Crystals up to 15 mm diameter were grown and cm size slabs were fabricated for evaluation. Our approach for shaped crystal growth previously used for crystal is an exciting approach to increase the yield and further reduce the fabrication cost. Preliminary results show high resistivity and large crystal growth feasibility for crystals using parent components.

Paper Details

Date Published: 5 September 2014
PDF: 5 pages
Proc. SPIE 9213, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI, 921314 (5 September 2014); doi: 10.1117/12.2062047
Show Author Affiliations
David House, Univ. of Maryland, Baltimore County (United States)
N. B. Singh, Univ. of Maryland, Baltimore County (United States)
B. Arnold, Univ. of Maryland, Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland, Baltimore County (United States)
B. Schreib, URS Corp. (United States)

Published in SPIE Proceedings Vol. 9213:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVI
Arnold Burger; Larry Franks; Ralph B. James; Michael Fiederle, Editor(s)

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