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Proceedings Paper

Mid infrared luminescence of dilute nitride semiconductors: microscopic approach vs experiments
Author(s): C. I. Oriaku; M. F. Pereira
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Paper Abstract

In this paper, analytical expressions for optical nonlinearities are applied in the simulations of the absorption and photoluminescence of mid infrared materials. The fast and efficient approximations reproduce recent experimental data for dilute nitride semiconductors with very good agreement.

Paper Details

Date Published: 5 September 2014
PDF: 6 pages
Proc. SPIE 9199, Terahertz Emitters, Receivers, and Applications V, 919910 (5 September 2014); doi: 10.1117/12.2062018
Show Author Affiliations
C. I. Oriaku, Sheffield Hallam Univ. (United Kingdom)
M. F. Pereira, Sheffield Hallam Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 9199:
Terahertz Emitters, Receivers, and Applications V
Manijeh Razeghi; Alexei N. Baranov; John M. Zavada; Dimitris Pavlidis, Editor(s)

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