Proceedings Paper
Minority carrier lifetime of thin polycrystalline silicon nanowire films on polycrystalline silicon layer prepared by aluminum-induced crystallization| Format | Member Price | Non-Member Price |
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Paper Abstract
We demonstrate the minority carrier lifetime measurements of polycrystalline silicon nanowires (poly-SiNW) films passivated with aluminum oxide (Al2O3) deposited by atomic layer deposition (ALD). The poly-SiNW films were prepared by metal-assisted chemical etching of poly-Si films. The poly-Si films were prepared by solid phase crystallization of a-Si films deposited by radio-frequency sputtering on aluminum induced crystallized poly-Si template. The deposition of an ALD-Al2O3 passivation layer and subsequent annealing enabled us to measure effective minority carrier lifetime of the poly-SiNW films. The effective lifetime was found to be 5.76 μs. This result indicates that ALDAl2O3 is beneficial to surface passivation of poly-SiNW films.
Paper Details
Date Published: 7 October 2014
PDF: 7 pages
Proc. SPIE 9178, Next Generation Technologies for Solar Energy Conversion V, 91780L (7 October 2014);
Published in SPIE Proceedings Vol. 9178:
Next Generation Technologies for Solar Energy Conversion V
Oleg V. Sulima; Gavin Conibeer, Editor(s)
PDF: 7 pages
Proc. SPIE 9178, Next Generation Technologies for Solar Energy Conversion V, 91780L (7 October 2014);
Show Author Affiliations
Tatsuya Yamazaki, Tokyo Institute of Technology (Japan)
Shinya Kato, Japan Science and Technology Agency (Japan)
Shinya Kato, Japan Science and Technology Agency (Japan)
Shinsuke Miyajima, Tokyo Institute of Technology (Japan)
Makoto Konagai, Tokyo Institute of Technology (Japan)
Japan Science and Technology Agency (Japan)
Makoto Konagai, Tokyo Institute of Technology (Japan)
Japan Science and Technology Agency (Japan)
Published in SPIE Proceedings Vol. 9178:
Next Generation Technologies for Solar Energy Conversion V
Oleg V. Sulima; Gavin Conibeer, Editor(s)
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