Proceedings Paper
Analysis of local charge-carrier diffusion length values in the photosensing film of photovoltaic HgCdTe FPA photodetectors| Format | Member Price | Non-Member Price |
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Paper Abstract
Two-dimensional diffusion model was used to analyze the charge-carrier diffusion process in the photosensitive film of photovoltaic HgCdTe IR FPA detectors with a continuous (without mesa-isolation of pixels) absorber layer. Some applications of the model and its inaccuracies are considered. Estimates of the local charge-carrier diffusion length values in the FPA regions under and outside photodiodes were obtained on the basis of spot-scan data.
Paper Details
Date Published: 7 October 2014
PDF: 6 pages
Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200W (7 October 2014); doi: 10.1117/12.2061573
Published in SPIE Proceedings Vol. 9220:
Infrared Sensors, Devices, and Applications IV
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)
PDF: 6 pages
Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200W (7 October 2014); doi: 10.1117/12.2061573
Show Author Affiliations
Alexei V. Vishnyakov, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Victor A. Stuchinsky, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Dmitry V. Brunev, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Victor A. Stuchinsky, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Dmitry V. Brunev, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Alexei V. Zverev, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Sergey A. Dvoretsky, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Sergey A. Dvoretsky, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Published in SPIE Proceedings Vol. 9220:
Infrared Sensors, Devices, and Applications IV
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)
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