
Proceedings Paper
Nano fabrication of compound bifocal zone plate for x-ray opticsFormat | Member Price | Non-Member Price |
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Paper Abstract
The development of nanotechnology gives new possibilities for fabrication of different x-ray optical elements. We
present results of focusing properties the compound silicon linear Zone Plate (ZP) for first and second orders. The
compound silicon linear ZP is fabricated by an electron beam lithography and lift-off technology. ZPs structures have
been etched by ion-plasma up to 6μm deep. A linear ZP of the first and second orders fabricated for x-ray radiation
10kev energy, the focal distance is 57sm. The entire aperture is 357.64μm, the width of the outermost zones of the first
and second orders are 595nm, and the number of the first and second order zones are: N(1) + N(2) = 251.The experiment
was performed at the beam line BL29XU Spring-8 of the Japan Synchrotron Radiation Facility. The experimentally and
theoretically investigations were done for x-ray energy at the 10keV and 12.4keV (0.1nm wavelength). The radial
distribution of intensity is determined as a convolution of the zone plate transmission function and the Kirchhoff
propagator in par-axial approximation. The algorithm is based on the FFT procedure and studied by means of computer
programming simulation.
Paper Details
Date Published: 28 August 2014
PDF: 6 pages
Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 91700V (28 August 2014); doi: 10.1117/12.2061560
Published in SPIE Proceedings Vol. 9170:
Nanoengineering: Fabrication, Properties, Optics, and Devices XI
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)
PDF: 6 pages
Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 91700V (28 August 2014); doi: 10.1117/12.2061560
Show Author Affiliations
A. V. Kuyumchyan, American Nanoscience and Advanced Medical Equipment, Inc. (United States)
A. Y. Suvorov, Brookhaven National Lab. (United States)
T. Ishikawa, SPring-8 (Japan)
V. V. Aristov, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
A. Y. Suvorov, Brookhaven National Lab. (United States)
T. Ishikawa, SPring-8 (Japan)
V. V. Aristov, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
E. V. Shulakov, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
A. A. Isoyan, Synopsys, Inc. (United States)
N. A. Kuyumchyan, California State Univ. (United States)
V. P. Mkrtchyan, Yerevan State Univ. (Armenia)
A. A. Isoyan, Synopsys, Inc. (United States)
N. A. Kuyumchyan, California State Univ. (United States)
V. P. Mkrtchyan, Yerevan State Univ. (Armenia)
Published in SPIE Proceedings Vol. 9170:
Nanoengineering: Fabrication, Properties, Optics, and Devices XI
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)
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