The structures consisting of Ge-nanoclusters grown on silicon oxide layer are promising candidates for optoelectronics as well as for nonvolatile memory circuits . This is due to their infrared photoluminescent and photoconductive properties. Crystalline germanium nanoclusters (NCs) are grown by a molecular-beam epitaxy technique on chemically oxidized Si(100) surface at 700°C. It was shown that structures with Ge-nanoclusters, grown on silicon surface characterized by fluctuations of the electrostatic field, that determined of positive charge trapped by dimensional quantum states Ge nanoclusters and Ge-nanoclusters/Si interface traps. Field effect on lateral conductivity and photovoltage spectra in Ge-nanostructures were analized.

Date Published: 28 August 2014
PDF: 6 pages
Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 91701C (28 August 2014); doi: 10.1117/12.2061093

Published in SPIE Proceedings Vol. 9170:
Nanoengineering: Fabrication, Properties, Optics, and Devices XI
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)