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Proceedings Paper

Sn halide based perovskite sensitized solar cells covering up to 1060 nm (presentation video)
Author(s): Yuhei Ogomi; Atsushi Morita; Shota Tsukamoto; Takahiro Saito; Naotaka Fujikawa; Shen Qing; Taro Toyoda; Kenji Yoshino; Shyam S. Pandey; Tingli Ma; Shuzi Shuzi Hayase
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Paper Abstract

We have succeeded in harvesting energy in the NIR region by using Sn halide based perovskite materials. The cell has the following composition: F-doped SnO2 layered glass/compact titania layer/porous titania layer/Sn based perovskite material/ p-type polymer semiconductor. The edge of the incident photon to current efficiency (IPCE) edge reached 1040 nm. 4.18 % efficiency with open circuit efficiency (Voc):0.42 V, fill factor (FF): 0.5, short circuit current (Jsc): 20.04 mA/cm2 is reported.

Paper Details

Date Published: 20 November 2014
PDF: 1 pages
Proc. SPIE 9184, Organic Photovoltaics XV, 91840S (20 November 2014); doi: 10.1117/12.2061065
Show Author Affiliations
Yuhei Ogomi, Kyushu Institute of Technology (Japan)
Atsushi Morita, Kyushu Institute of Technology (Japan)
Shota Tsukamoto, Kyushu Institute of Technology (Japan)
Takahiro Saito, Kyushu Institute of Technology (Japan)
Naotaka Fujikawa, Kyushu Institute of Technology (Japan)
Shen Qing, University of Electro-communication (Japan)
Taro Toyoda, University of Electro-communication (Japan)
Kenji Yoshino, Miyazaki Univerisity (Japan)
Shyam S. Pandey, Kyushu Institute of Technology (Japan)
Tingli Ma, Kyushu Institute of Technology (Japan)
Shuzi Shuzi Hayase, Kyushu Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 9184:
Organic Photovoltaics XV
Zakya H. Kafafi; Paul A. Lane; Ifor D. W. Samuel, Editor(s)

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