
Proceedings Paper
Spin-orbit interaction and spin coherence in narrow-gap semiconductor and semimetal wiresFormat | Member Price | Non-Member Price |
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Paper Abstract
Spin-dependent quantum transport experiments on InSb and InAs heterostructures and Bi thin films are
discussed, focusing on mesoscopic geometries where spin-orbit interaction and quantum coherence determine the
properties. The narrow-bandgap semiconductors InSb and InAs, and the semimetal Bi have substantial spin-orbit
interaction. The experiments use antilocalization to study spin-orbit interaction and spin coherence lengths in nanolithographic
wires fabricated on the materials. In the three systems the spin coherence lengths increase with decreasing
wire widths if other parameters stay constant, of technological importance for spin-based devices. The experiments
also indicate that Bi has surface states with Rashba-like spin-orbit interaction. A quasi-one-dimensional model of antilocalization,
as fitted to the data, is explained and its consequences for quantum coherence in mesoscopic structures is
explored. A united understanding of the experiments is presented relying on the duality between the Aharonov-Bohm
and the Aharonov-Casher phases, the latter resulting from spin-orbit interaction. The duality strengthens the analogy
between phenomena under magnetic fields and under spin-orbit interaction.
Paper Details
Date Published: 28 August 2014
PDF: 9 pages
Proc. SPIE 9167, Spintronics VII, 91670D (28 August 2014); doi: 10.1117/12.2060839
Published in SPIE Proceedings Vol. 9167:
Spintronics VII
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)
PDF: 9 pages
Proc. SPIE 9167, Spintronics VII, 91670D (28 August 2014); doi: 10.1117/12.2060839
Show Author Affiliations
J. J. Heremans, Virginia Polytechnic Institute and State Univ. (United States)
R. L. Kallaher, Virginia Polytechnic Institute and State Univ. (United States)
M. Rudolph, Virginia Polytechnic Institute and State Univ. (United States)
R. L. Kallaher, Virginia Polytechnic Institute and State Univ. (United States)
M. Rudolph, Virginia Polytechnic Institute and State Univ. (United States)
M. B. Santos, The Univ. of Oklahoma (United States)
W. Van Roy, IMEC (Belgium)
G. Borghs, IMEC (Belgium)
W. Van Roy, IMEC (Belgium)
G. Borghs, IMEC (Belgium)
Published in SPIE Proceedings Vol. 9167:
Spintronics VII
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)
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