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Proceedings Paper

The low-frequency Raman spectra and nanostructure of As-Se-S and As-Se-Te chalcogenide semiconductors doped by samarium
Author(s): G. A. Isayeva; R. I. Alekberov; S. I. Mekhtiyeva; A. I. Isayev
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Paper Abstract

It has been established that the Raman scattering (RS) of chalcogenide glass–like semiconductors (CGS) materials As-Se-S and As-Se-Te at frequencies below 100 cm-1 consists of two parts: first - which the intensity with increasing frequency up to 30 ÷ 40 cm-1 decreases (quasi-elastic scattering); second - which have been observed a broad band with a maximum at frequencies of ~ 63 ÷ 67 cm-1 (boson peak - BP). Such a case is absent in the respective crystals. The observed features are associated with relaxation and excess density of states of acoustic vibrations in irregularities is localized with nanometer-size of material. It is shown that the contribution of the different types of scattering in a low-frequency range depends on the degree of disorder in the material, which varies with the change of chemical composition and by doping.

Paper Details

Date Published: 5 September 2014
PDF: 8 pages
Proc. SPIE 9205, Reflection, Scattering, and Diffraction from Surfaces IV, 92050C (5 September 2014); doi: 10.1117/12.2060358
Show Author Affiliations
G. A. Isayeva, Azerbaijan National Academy of Sciences (Azerbaijan)
R. I. Alekberov, Azerbaijan National Academy of Sciences (Azerbaijan)
S. I. Mekhtiyeva, Azerbaijan National Academy of Sciences (Azerbaijan)
A. I. Isayev, Azerbaijan National Academy of Sciences (Azerbaijan)

Published in SPIE Proceedings Vol. 9205:
Reflection, Scattering, and Diffraction from Surfaces IV
Leonard M. Hanssen, Editor(s)

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