It has been established that the Raman scattering (RS) of chalcogenide glass–like semiconductors (CGS) materials As-Se-S and As-Se-Te at frequencies below 100 cm^-1 consists of two parts: first - which the intensity with increasing frequency up to 30 ÷ 40 cm^-1 decreases (quasi-elastic scattering); second - which have been observed a broad band with a maximum at frequencies of ~ 63 ÷ 67 cm-1 (boson peak - BP). Such a case is absent in the respective crystals. The observed features are associated with relaxation and excess density of states of acoustic vibrations in irregularities is localized with nanometer-size of material. It is shown that the contribution of the different types of scattering in a low-frequency range depends on the degree of disorder in the material, which varies with the change of chemical composition and by doping.

Date Published: 5 September 2014
PDF: 8 pages
Proc. SPIE 9205, Reflection, Scattering, and Diffraction from Surfaces IV, 92050C (5 September 2014); doi: 10.1117/12.2060358

Published in SPIE Proceedings Vol. 9205:
Reflection, Scattering, and Diffraction from Surfaces IV
Leonard M. Hanssen, Editor(s)