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Proceedings Paper

Development of transparent and conductive Al doped Zn1-xMgxO thin film by sol-gel process with two-step annealing
Author(s): Lei Meng; Shinsuke Miyajima; Makoto Konagai
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Paper Abstract

Al doped Zn1-xMgxO (AZMO) thin film was developed by sol-gel process with two-step annealing. Effect of annealing temperature on structural, optical and electrical properties was investigated. It was found that first annealing mainly determines the film crystallinity and grain size, while the second annealing plays a critical role in activating dopant. All of AZMO thin films show a (002) preferential orientation and a high transmittance of over 85% in wavelength region from 400 nm to 1500 nm. A resistivity of 2.1×10-2 Ω∙cm was achieved for a film with an optical bandgap of 3.6 eV.

Paper Details

Date Published: 7 October 2014
PDF: 6 pages
Proc. SPIE 9177, Thin Films for Solar and Energy Technology VI, 91770G (7 October 2014); doi: 10.1117/12.2060236
Show Author Affiliations
Lei Meng, Tokyo Institute of Technology (Japan)
Shinsuke Miyajima, Tokyo Institute of Technology (Japan)
Makoto Konagai, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 9177:
Thin Films for Solar and Energy Technology VI
Louay A. Eldada; Michael J. Heben, Editor(s)

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