We propose a facile approach to fabricate graphene nano-objects (GNOs) using interference lithography (IL) and direct self-assembly of nanoparticles. Uniformly spaced parallel photoresist (PR) lines and periodic hole arrays are proposed as an etch mask for producing graphene nanoribbons (GNRs), and graphene nanomesh (GNM), respectively. In a different experiment, the PR line arrays are transferred to uniform oxide channels, and silica nanoparticle dispersions with an average size of 10 nm are spun on the patterned surface, leaving a monolayer uniform nanoparticle assembly on the graphene. Following the particle deposition, the graphene is removed in the narrow spacing between the particles, using the O2 plasma etch, leaving ordered graphene quantum dot (GQD) arrays. The IL technique and etch process enables tuning the GNOs dimensions.

Date Published: 10 September 2014
PDF: 9 pages
Proc. SPIE 9168, Carbon Nanotubes, Graphene, and Associated Devices VII, 91680B (10 September 2014); doi: 10.1117/12.2060003

Published in SPIE Proceedings Vol. 9168:
Carbon Nanotubes, Graphene, and Associated Devices VII
Manijeh Razeghi; Young Hee Lee; Maziar Ghazinejad, Editor(s)