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Proceedings Paper

Time-resolved contrast in near-field scanning optical microscopy of semiconductors
Author(s): Andres H. La Rosa; Catherine L. Jahncke; Hans D. Hallen
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Paper Abstract

We demonstrate the ability of near-field scanning optical microscopy (NSOM) technique to detect inhomogeneities of the dynamics of excess carriers in oxidized silicon wafers. NSOM is used to improve the spatial resolution of a standard IR-scattering optical technique, which is carried out in a noncontact fashion. Continuous wave infrared light is used as a detector of the time dependent carrier population produced by a pulsed visible laser. We will show high resolution images of carrier lifetime, and discuss some aspects of the NSOM measurement that differentiate it from its far field counterpart.

Paper Details

Date Published: 30 March 1995
PDF: 8 pages
Proc. SPIE 2384, Scanning Probe Microscopies III, (30 March 1995); doi: 10.1117/12.205917
Show Author Affiliations
Andres H. La Rosa, North Carolina State Univ. (United States)
Catherine L. Jahncke, North Carolina State Univ. (United States)
Hans D. Hallen, North Carolina State Univ. (United States)

Published in SPIE Proceedings Vol. 2384:
Scanning Probe Microscopies III
Mehdi Vaez-Iravani, Editor(s)

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