We report the testing result of e2v CIS 107 CMOS sensor for temperature from 300K to 170K. The CIS 107 sensor is a prototype device with 10 different variations of pixel designs. The sensor has 1500 × 2000, 7 μm pixels with 4 outputs. Each variation covers 1500 × 200 pixels. These are 4T pixels with high resistivity epitaxial silicon and back thinned to 11μm. At room temperature, the several variants of pixels show peak QE higher than 90%, readout noise around 5e- and dark current around 50e-/s/pix. The full well is about 15000 e- due to the limitation of the transfer gate capacitor. The CIS 107 device was further characterized at different device temperatures from 170K to 300K. The readout noise decreases and the full well increases as the device is operated at lower temperature.

Date Published: 23 July 2014
PDF: 8 pages
Proc. SPIE 9154, High Energy, Optical, and Infrared Detectors for Astronomy VI, 91542I (23 July 2014); doi: 10.1117/12.2057361

Published in SPIE Proceedings Vol. 9154:
High Energy, Optical, and Infrared Detectors for Astronomy VI
Andrew D. Holland; James Beletic, Editor(s)