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Proceedings Paper

Preparation of graphite and graphene thick film on AlN substrate
Author(s): Saijie Gao; Yue Shen; Feng Gu; Mengjie Xu; Xiafan Wu; Jindong Xu
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Paper Abstract

High-purity AlN ceramic substrate was prepared by conventional sintering in N2 atmosphere at 1710°C for 3 hours. Measurement results of SEM, X-ray Diffraction (XRD) indicated that the AlN substrate was sintered completely, average particle size is about 1-3 μm and the porosity is very low. Graphite and graphene electrodes were obtained by simple doctor-blade coating method on AlN substrate. The samples were investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscope (SEM). Sheet resistance is measured by the four-probe method. Annealing at H2 reduction atmosphere can slow down graphitized trend of graphene and protect it’s structure. The graphite electrode was applied in typical sandwich-structure DSSCs with ZnO as photoanodes, and the photoelectric conversion efficiency (η) was about 0.78%, which can be optimized and applied in DSSCs by process optimization.

Paper Details

Date Published: 16 December 2013
PDF: 6 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680O (16 December 2013); doi: 10.1117/12.2054157
Show Author Affiliations
Saijie Gao, Shanghai Univ. (China)
Yue Shen, Shanghai Univ. (China)
Feng Gu, Shanghai Univ. (China)
Mengjie Xu, Shanghai Univ. (China)
Xiafan Wu, Shanghai Univ. (China)
Jindong Xu, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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