Share Email Print

Proceedings Paper

Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering
Author(s): Yan Li; Dongping Zhang; Bo Wang; Guangxing Liang; Zhuanghao Zheng; Jingting Luo; Xingmin Cai; Ping Fan
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

Paper Details

Date Published: 16 December 2013
PDF: 6 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906803 (16 December 2013); doi: 10.1117/12.2054097
Show Author Affiliations
Yan Li, Shenzhen Univ. (China)
Dongping Zhang, Shenzhen Univ. (China)
Bo Wang, Shenzhen Univ. (China)
Guangxing Liang, Shenzhen Univ. (China)
Zhuanghao Zheng, Shenzhen Univ. (China)
Jingting Luo, Shenzhen Univ. (China)
Xingmin Cai, Shenzhen Univ. (China)
Ping Fan, Shenzhen Univ. (China)

Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?