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Proceedings Paper

On the photoluminescence of as-deposited Tb-doped silicon oxides and oxynitrides fabricated by ECR-PECVD
Author(s): J. M. Ramírez; J. Wojcik; Y. Berencén; P. Mascher; B. Garrido
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Paper Abstract

In-situ doping of Tb3+ ions in silicon oxides and oxynitrides deposited by electron-cyclotron-resonance plasma enhanced chemical-vapour (ECR-PECVD) has been performed. Oxygen and nitrogen gas flow rates were changed to produce a gradual substitution of oxygen by nitrogen in the host matrix. Bright green luminescence from as-deposited layers is observed by the naked eye under daylight conditions. Tbdoped nitrogen-rich samples showed a considerable photoluminescence (PL) enhancement compared to Tb-doped silicon oxides. An optimum layer composition for efficient Tb3+ excitation under non-resonant optical pumping is obtained. The combination of a low temperature treatment with bright luminescence could be instrumental for the development of light emitting devices in other platforms with more restrictive temperature requirements.

Paper Details

Date Published: 1 May 2014
PDF: 9 pages
Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 913309 (1 May 2014); doi: 10.1117/12.2052571
Show Author Affiliations
J. M. Ramírez, Univ. de Barcelona (Spain)
J. Wojcik, McMaster Univ. (Canada)
Y. Berencén, Univ. de Barcelona (Spain)
P. Mascher, McMaster Univ. (Canada)
B. Garrido , Univ. de Barcelona (Spain)

Published in SPIE Proceedings Vol. 9133:
Silicon Photonics and Photonic Integrated Circuits IV
Laurent Vivien; Seppo Honkanen; Lorenzo Pavesi; Stefano Pelli; Jung Hun Shin, Editor(s)

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