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Proceedings Paper

Selective material ablation by the TEA CO2 laser
Author(s): Tetsumi Sumiyoshi; Akira Shiratori; Yutaka Ninomiya; Minoru Obara
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Paper Abstract

This paper reports two topics in the material processing using TEA CO2 lasers. We demonstrated selective ablation of hydrogenated amorphous silicon (a-Si:H) thin layer on a quartz substrate by the second harmonic (SH) radiation of TEA CO2 laser generated by AgGaSe2 nonlinear crystal. Si-H bonds contained in a-Si:H strongly absorb the 5 micrometers SH radiation and resulted in the selective ablation of the a-Si:H layer. The successful ablation processing of ethylenetetrafluoroethylene (ETFE) copolymer by the 9.6 micrometers fundamental wavelength TEA CO2 laser is also reported. Only ETFE thin film adhered to an aluminum substrate can be ablated by the TEA CO2 laser.

Paper Details

Date Published: 31 March 1995
PDF: 4 pages
Proc. SPIE 2502, Gas Flow and Chemical Lasers: Tenth International Symposium, (31 March 1995); doi: 10.1117/12.204977
Show Author Affiliations
Tetsumi Sumiyoshi, Keio Univ. (Japan)
Akira Shiratori, Keio Univ. (Japan)
Yutaka Ninomiya, Keio Univ. (Japan)
Minoru Obara, Keio Univ. (Japan)

Published in SPIE Proceedings Vol. 2502:
Gas Flow and Chemical Lasers: Tenth International Symposium
Willy L. Bohn; Helmut Huegel, Editor(s)

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