This paper reports two topics in the material processing using TEA CO₂ lasers. We demonstrated selective ablation of hydrogenated amorphous silicon (a-Si:H) thin layer on a quartz substrate by the second harmonic (SH) radiation of TEA CO₂ laser generated by AgGaSe₂ nonlinear crystal. Si-H bonds contained in a-Si:H strongly absorb the 5 micrometers SH radiation and resulted in the selective ablation of the a-Si:H layer. The successful ablation processing of ethylenetetrafluoroethylene (ETFE) copolymer by the 9.6 micrometers fundamental wavelength TEA CO₂ laser is also reported. Only ETFE thin film adhered to an aluminum substrate can be ablated by the TEA CO₂ laser.

Date Published: 31 March 1995
PDF: 4 pages
Proc. SPIE 2502, Gas Flow and Chemical Lasers: Tenth International Symposium, (31 March 1995); doi: 10.1117/12.204977

Published in SPIE Proceedings Vol. 2502:
Gas Flow and Chemical Lasers: Tenth International Symposium
Willy L. Bohn; Helmut Huegel, Editor(s)